Problems with high on-resistance that are seen in traditional vertical structure DMOSFET still appear in LDMOSFET and phenomena of turn-off delay and latch-up are seen in LIGBT as well.

传统垂直式dmosfet高导通电阻的缺点在LDMOSFET中依旧存在，而垂直式igbt关闭延迟和闩锁的现象，也在LIGBT中发生。

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The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capacitance, which also suppressed the self-heating effects and floating body effects.

工艺和性能模拟分析表明，此结构具有SOI器件低泄漏电流和低输出电容的特性，而且能抑制自加热效应和浮体效应。

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