Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
The trick is to put the titanium oxide in as a layer between the part of the cell where the electrons are liberated and the part where they are collected for dispatch into the wider world.
这个技术是将氧化钛作为一层置于电子释放和流动的两个区域间。
The method of the present invention can greatly increase evenness of the grid oxide layer.
采用本发明的方法可大幅提高栅极氧化层的均匀性。
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