A lateral DMOS device having a structure that prevents breakdown of a semiconductor device while enhancing the breakdown voltage property.
一种横向dmos器件，具有防止半导体器件击穿同时增强击穿电压性能的结构。
The lock features a 12/24 VDC voltage-sensing input, door static and alignment sensor, lateral and vertical alignment adjustment, and a floating armature.
该锁配备12/24伏电压传感输入，门静态和对准传感器，横向和纵向对准调整，以及浮动电枢。
Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed.
基于单粒子辐照的等离子体输运机理，提出了横向高压dmos单粒子辐照的瞬态响应模型。
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