We effectively solve the stress of wafer process and prove the function of the new slicing slurry and lapping slurry in wafer process. Research fruit is applied to manufacture.
在实验部分中我们有效地解决了硅片加工的应力问题，验证了新型切削液和研磨液在硅片加工过程中的明显作用，并使研究成果投入生产转化为产品。
参考来源 - 集成电路衬底制造过程中应力问题的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W - CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Secondly, parameters must be optimized in lapping process as follows: pressure, rotation, slurry concentration, flow, time.
在研磨工艺中，研磨压力、磨盘转速、磨液浓度、流量大小、研磨时间必须有效配合；
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