At the 2010 IEEE International Electron Devices Meeting in San Francisco next week, Samsung will present a paper on a rival technology: ''gate-last high-k/metal gate devices.''

不过， 令人 感到意外的是，在下周即将召开的2010年IEEE国际电子设备大会上，三星准备演讲的文章题目竟然是《gate-last工艺high-k金属栅设 备》。

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The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.

作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。

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"High resolution electron microscopy for materials science". D. Shindo, K. Hiraga. Springer. 1998. Beautiful collection of HREM images and examples of their analysis.

有中文版，《材料评价的高分辨电子显微学方法》，大量精彩的高分辨照片，使用技巧。

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The 2010 National Medal Science to Jacqueline K. Barton, California Institute of Technology, for discovery of a new property of the DNA helix long-range electron transfer, and for showing that electron transfer depends upon stacking of the base pairs and DNA dynamics.

WHITEHOUSE: President Obama Honors the Country��s Top Innovators and Scientists | The White House