There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
Transistor thermal spectrum, as a new method, different from the commonly infrared thermogram, is introduced to characterize the non-uniform property of the junction temperature distribution.
晶体管热谱是表示晶体管结温不均匀性的一种与热像图不同的新方法。
A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。
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