But when these two semiconductors are connected, they form a P-N junction.
但这两种半导体连接起来的时候，它们之间就形成一个P - N结。
At the junction where the two layers meet, electrons pair up with holes, establishing an electric field that prevents electrons from moving from the n-type material to the p-type.
两层接触处电子与“孔”便成双配对地形成了电场，阻止电子从n层移到的p层。
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
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