The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The two tests susceptible to junction heating are the forward voltage and leakage current tests.
对结发热最敏感的两种测试是正向电压测试和漏电流测试。
Leakage current theory for reverse PN junction is modified on the basis of theoretic analysis.
根据理论分析，修正了反偏pn结漏电流理论。
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