The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
At the junction where the two layers meet, electrons pair up with holes, establishing an electric field that prevents electrons from moving from the n-type material to the p-type.
两层接触处电子与“孔”便成双配对地形成了电场，阻止电子从n层移到的p层。
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