interface-trap 界面陷阱
edible fungus-liquid interface trap inoculator 食用菌液体菌种接种器
interface trap states 界面陷阱态
Interface trap density 界面陷阱密度
interface trap distribution 界面陷阱分布
Due to the interface trap density, the C-V characteristics curve at high frequency has shown distortion.
通过分析和研究还发现,界面态存在时,高频C-V特性受到影响,从禁带中界面态的分布进行归纳,得到C-V曲线形变的规律。
参考来源 - 纳米SOI MOSFET的结构设计和性能分析The physical model of interface trap in PECVDSiOxNythin film which is originated by the suspension bond was confirmed.
证实了PECVD SiOxNy薄膜中界面陷阱来源于悬挂键的物理模型。
参考来源 - PECVD形成纳米级薄膜界面陷阱特性的雪崩热电子注入研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The relationship between the threshold voltage and the peak of proportional difference, and between the interface trap density and stress time are also acquired.
得到了阈值电压和比例差分峰值，界面陷阱密度和应力时间的关系。
Both gate and field oxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest. interface trap densities.
这两个栅和场氧化层都是通过热氧化过程生长出来的，因为只有热氧化才可以提供具有低陷阱密度性能最好的氧化层。
With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.
借助界面态建立的H~+两步模型和F在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。
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