界面态密度
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The main work of the paper is to reduce the interface states density by optimizing the MOS technology.
本文研究的核心是如何通过对MOS工艺的合理优化来降低界面态密度。
·2,447,543篇论文数据，部分数据来源于NoteExpress
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
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