铟锡氧化物热等静压时分解氧对裂纹形成的作用 - 中南大学学报(自然科学版、英文版) 关键字: 氧化铟;氧化锡;裂纹;热等静压;冷等静压[gap=901]Key words: indium oxide; tin oxide; crack; HIP; CIP
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Indium tin oxide 氧化铟锡 ; 铟锡氧化物 ; 掺锡氧化铟
Tin-doped Indium Oxide 掺杂锡之铟氧化物
tin indium oxide [电子] 氧化铟锡
High purity indium oxide 高纯氧化铟
Indium Gallium Zinc Oxide 氧化铟镓锌 ; 铟镓锌氧化物 ; 铟镓氧化锌
Nano Wire Indium Oxide 纳米氧化铟线
copper Indium oxide 铜铟氧化物
Indium oxide film 氧化铟膜
nano indium oxide 纳米氧化铟
In particular, indium oxide exhibits good sensitivity both to reducing and oxidizing gases. Therefore, it has been expected a promising application in gas sensor.
由于氧化铟材料对氧化性气体和还原性气体都表现出良好的气敏性能,而被应用于半导体气体传感器。
参考来源 - 氧化铟纳米材料的制备及其气敏性能研究·2,447,543篇论文数据,部分数据来源于NoteExpress
Tin doped indium oxide (ITO) films were deposited on glass substrates by reactive magnetron sputtering using a metallic alloy target (in Sn, 90 10).
采用铟锡合金靶(铟锡,90 - 10),通过直流反应磁控溅射在玻璃基片上制备出ito薄膜,并在大气环境下高温退火处理。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
本文采用射频辅助脉冲激光沉积(PLD)系统,在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Transparent conductive, tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.
采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟(IWO)透明导电氧化物薄膜。
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