In the second part, using the wave function and binding energy obtained from the first part, the photoionization cross-section of the impurity is calculated.
在第二部分，我们采用第一部分所选的变分波函数和得到的束缚能进一步计算了类氢杂质体系的光致电离截面。
A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.
多晶硅化金属层设置于杂质掺杂多晶硅层上，而多晶硅化金属层与多晶硅层可作为字线。
By making use of the strong bound quantum dot model and neglecting the effects of impurity on electron wave function, this thesis is also reported how to use the spin of nuclear as the quantum bit.
利用强束缚量子点模型，忽略杂质对于电子波函数的影响，我们还讨论了如何利用核自旋构造量子位。
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