Both the simulation result and the calculation result show if the breakdown voltage exceeds 2000V, the I layer thickness will demand 200um and the impurity density will need 4×10~(12) /cm~(-3).
计算结果和模拟结果表明对于反向击穿电压大于20007的PIN二极管,Ⅰ区厚度取200um,杂质浓度取4×10~(12)/cm~(-2),可以满足设计要求。
参考来源 - 微波PIN二级管的设计与制备工艺研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The results show that the damaged layer of silicon cut by WEDM mainly appears massive impurity elements, remelted and elastic distortion with a high density dislocation.
结果表明：电火花线切割单晶硅损伤层主要由杂质元素重污染层、重熔层和含有高密度位错的弹性畸变层组成；
The possibility of the stimulated radiation at the low atomic density is demonstrated, and the possibility of impurity examination by means of stimulated radiation signals is estimated.
证实了在低原子浓度下探测受激辐射的可能性，并估计了用受激辐射信号检测杂质的可能性。
The radiated power of impurity ions varying with time and electron temperature for given the profiles of electron temperature and density is calculated, and the corresponding physics is discussed.
在给定电子温度和密度剖面下，给出了杂质离子辐射率随时间和电子温度变化的计算结果，并讨论了相关物理过程。
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