304L不锈钢钝化膜的半导体性能研究 关键字： 钝化膜；电容测量；杂质浓度；平带电位 [gap=1211]Key Words： passive film；capacitance measurement；impurity concentration；flat band potential
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graded impurity concentration 缓变杂质浓度
emitter impurity concentration 发射区杂质浓度
impurity concentration transition region 杂质浓度过渡区
Net impurity concentration 净杂质浓度
surface impurity concentration 表面杂质浓度
impurity concentration profile 杂质浓度深度分布
impurity concentration distribution 杂质浓度分布
The impurity concentration distribution in diode p-n junction can be presented with the simplified models,named as abrupt junction and the linearly graded junction,but precise measurements show there existing limitation in these tradition models.
简化的突变结或线性缓变结模型已能很好地近似二极管p-n结杂质浓度分布规律,但从精密的实验测量结果中发现传统模型存在局限性。
参考来源 - 二极管p·2,447,543篇论文数据，部分数据来源于NoteExpress
The variation of the sawtooth activity is mainly related to the impurity concentration.
杂质聚中是锯齿活性变化的主要原因。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
The results show that the residual resistance ration relates not only to the aging temperature and the impurity concentration of the metal, but also to the aging time.
结果表明：金属铍的剩余电阻比不仅与时效温度和金属内杂质的浓度有关，而且受时效时间的影响；
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