hydrogen plasma gun 氢等离子体枪
hydrogen plasma heating 氢等离子体加热
Hydrogen plasma process 氢等离子体处理
hydrogen plasma reactor 氢等离子体反应器
hydrogen plasma cleaning 氢等离子体清洗
hydrogen plasma treatment 氢等离子体表面处理
hydrogen plasma annealing 等离子体退火
hydrogen plasma degradation H等离子体退化
After cleaned by hydrogen plasma for 12 minutes at 200℃,they disappears.
在200℃下经氢等离子体处理12分钟后，C的污染物消失。
参考来源 - SiC半导体表面处理技术研究Field emission behavior is consistant with Fowler-Nordheim theory. After the surface of a-D film was etched by hydrogen plasma, better field emission properties was obtained.
电子场发射行为符合F-N理论；发现氢等离子体表面处 理可以显著增强非晶金刚石薄膜的电子场发射性能。
参考来源 - 无氢非晶金刚石薄膜的制备及其电子场发射性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
A compact hydrogen plasma gun system was designed and tested.
设计了一种紧凑型氢等离子体枪及驱动电路。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
The equation of state of dense hydrogen plasma were calculated by Direct Path Integral Monte Carlo approach.
采用直接蒙特卡洛路径积分方法计算了稠密氢等离子体的物态方程。
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