The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
运用本发明，可有效地降低公知低温多晶硅薄膜晶体管的热电子效应，使得低温多晶硅薄膜晶体管在工作时的稳定性能够有明显的改善。
This Paper studies interface effect of avalanche hot electron in MOS structures.
本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。
The hot ion beam is cooled by Coulomb interaction with intense and cold hollow electron beams. By analysis of space charge effect of solid and hollow electron beam respectively, the …
通过分析实心电子束和空心电子束的空间电荷场，研究了其对电子束速度和温度的影响。
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