The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.
通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。
The calculating result in practical engineering shows that the transient effect on demodulation probability of error is very low even when the system frequency hopping is at middle-high speeds.
本文结合工程实践的计算表明，即使在中高速跳频时，暂态过程对误码率的影响也是很小的。
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