The principle of bootstrap driving circuit for high voltage floating MOSFET and the internal circuit principle of high voltage driving IC are introduced.
介绍高压浮动MOSFET自举驱动电路的工作原理和高压驱动芯片的内部原理；讨论影响自举电容设计的各种因素，并给出自举电容的计算公式。
Once the grounding system of HV single-core cable is broken, high floating voltage will appear on its metal sheath, thus causes serious consequence.
高压单芯电缆的接地系统一旦被破坏，在其电缆金属护层上会产生高值悬浮电压而引发严重后果。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
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