High anneal temperature and long anneal time do good on increasing the size and density of silicon nano-crystals.

退火后薄膜中的晶粒尺寸和密度都有所提高，退火温度升高或退火时间延长都有助于结晶状态的改善。

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For erbium ion in light-emitting layer with light activated process and other chemical reaction, it is necessary to anneal the devise with high temperature in fabrication process.

为了让发光层内铒离子具有光活化及其他的化学反应的发生，在制程中热退火是必须的。

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The quality of top silicon layer formed by anneal at low temperature may be better than that at high temperature.

通过低温退火，可以获得质量优于高温退火的顶部硅层。

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However, it is not possible to anneal the metal oxides, an active material, at this high temperature on flexible polymer substrates.

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