B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films.
在热丝化学气相沉积金刚石系统中，衬底温度是影响金刚石成膜质量的关键因素之一。
The initial growth process of diamond grain synthesized by HFCVD method was investigated by using XL30FEG SEM.
用XL 30feg扫描电镜对热丝化学气相沉积(HFCVD)法合成的金刚石颗粒的初期生长过程进行了研究。
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