关键词：ZnO薄膜；Si衬底；PL谱；异质结 中图分类号：O484 [gap=1259]Key words：ZnO film;Si substrate; photoluminescence;heterojunctions
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The current-voltage (I-V) characteristics and temperature dependence of the a-C/n-Si heterojunctions have been investigated.
论文第一部分研究了a-C/Si异质结的电压-电流(I-V)特性及其温度依赖效应。
参考来源 - 用磁控溅射方法制备非晶碳膜/硅异质结及其电输运性质的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
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The transient peak voltage of the heterojunctions were observed when the laser was turned on and off, and increased with chopping frequency and showed saturate tendency finally.
在激光打开和关闭时，都观测到了异质结光伏信号的瞬态响应峰值，且该峰值随斩波频率不断增大并在频率较大时趋于饱和。
Onedimensional carbon nanometer heterojunctions (1DCNHJs) have attracted tremendous interest owing to their distinctive microstructures, properties and potential applications in nanometer devices.
碳基一维纳米异质结由于其独特的结构与性能，以及在纳米器件方面的应用前景，得到了广泛的关注和大量的研究。
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