• 重掺杂 - 引用次数：1

  The grain size of heavy doping films were increased with increasing the annealing temperature and time, but the conductance is always saturated, which is due to the fact that the solubility and activation of B in poly-Si are limited.

  重掺杂纳米多晶Si 薄膜的晶粒尺寸,随退火温度的升高和退火时间的增加而变大,而电阻率值则趋于饱和,这是由B 元素在多晶Si 薄膜中的固体溶解度和激活率的限制所引起。

  参考来源 - 纳米多晶Si薄膜的热壁LPCVD淀积与结构特性研究
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