The grain size of heavy doping films were increased with increasing the annealing temperature and time, but the conductance is always saturated, which is due to the fact that the solubility and activation of B in poly-Si are limited.
重掺杂纳米多晶Si 薄膜的晶粒尺寸,随退火温度的升高和退火时间的增加而变大,而电阻率值则趋于饱和,这是由B 元素在多晶Si 薄膜中的固体溶解度和激活率的限制所引起。
参考来源 - 纳米多晶Si薄膜的热壁LPCVD淀积与结构特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
There is a drift field at the back contact of BSF cell created by heavy doping.
背电场电池在背接触处以高掺杂造成一漂移场。
Our theory can be applied not only to the alloy systems of heavy electron metals, but also to the discussion of doping effects in newly discovered heavy - fermion insulators.
该理论不仅可应用于重电子金属的合金系统，还适合于讨论最新发现的重费米子绝缘体中的掺杂效应。
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