霍尔迁移率（Hall mobility）： Hall系数RH与电导率σ的乘积，即│RH│σ，具有迁移率的量纲, 故特别称为Hall迁移率，表示为μH =│RH│σ。
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When the sputtering power is 90W, the maximum carrier concentration is 4.99×1020 cm-3, with a Hall mobility of 14 cm2V-1s-1.
当溅射功率为90 W时,载流子浓度达到最大为4.99×1020cm-3,霍耳迁移率只有14 cm2V-1s-1。
参考来源 - 氧化锌掺钇透明导电膜的制备及特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
F-passivation decreased the scattering centers of the carriers and the height of the potential barriers at the grain boundaries, thus, increased the Hall mobility of the carriers.
的钝化效应减少了载流子的散射中心，降低了晶界势垒，有效地提高了载流子的迁移率。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
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