相应的横向电势差称为霍耳电 势差（霍耳电压）， H U 实验表明： d IB R U H H H R 霍耳系数（Hall coefficient） 分析：霍耳效应的出现是运动电荷在磁场中受洛仑兹力 作用发生横向漂移的结果。
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measurement of Hall coefficient 霍尔系数测量
Hall coefficient- 霍尔系数
anomalous hall coefficient 反常hall系数
Qualitative Hall coefficient 宏观霍尔系数
hall coefficient measurement 霍尔系数测量
The thermopower and Hall coefficient of CuxNbS2 show opposite sign,indicating two kinds of carrier in this system.
CuxNbS2的热电势和霍尔系数具有不同的符号,这表明这一体系包含两种不同类型的载流子。
参考来源 - 铁基高温超导体和过渡金属二硫化物新材料的合成和输运性质的研究And we obtain the global MR effects of the system consequently. We introduce three parameters which describe inhomogeneities of geometry, Hall coefficient and Ohm resistance respectively and we also consider their influence on the magnetotransport behaviors.
我们引入三个参数分别描述体系的几何非均匀性、霍耳系数非均匀性及欧姆电阻的非均匀性,考察了它们对材料的磁输运行为的影响。
参考来源 - 非磁性半导体的异常磁电阻效应研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The study result shows that the Hall coefficient (absolute value) of n-Si samples will decrease with the increase of compressive stress.
研究结果表明，样品的霍尔系数绝对值随着作用于样品压缩应力的增加而减少。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
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