When the sputtering power is 90W, the maximum carrier concentration is 4.99×1020 cm-3, with a Hall mobility of 14 cm2V-1s-1.
当溅射功率为90 W时,载流子浓度达到最大为4.99×1020cm-3,霍耳迁移率只有14 cm2V-1s-1。
参考来源 - 氧化锌掺钇透明导电膜的制备及特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
F-passivation decreased the scattering centers of the carriers and the height of the potential barriers at the grain boundaries, thus, increased the Hall mobility of the carriers.
的钝化效应减少了载流子的散射中心，降低了晶界势垒，有效地提高了载流子的迁移率。
Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
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