metal gate transistor 金属栅晶体管
Tri-gate Transistor 电晶体 ; 三栅极晶体管 ; 采用三栅极晶体管技术 ; 三闸晶体管
silicon gate transistor 硅栅晶体管
resonant gate transistor [电子] 谐振栅晶体管
floating gate transistor 浮栅金属氧化物半导体晶体管 ; 晶体管
self-aligning gate transistor [电子] 自控栅极晶体管 ; 自对准闸晶体管
Injection enhanced gate transistor 电子注入增强栅晶体管 ; 门极晶体管
lateral insulated-gate transistor 横向绝缘栅晶体管
mos insulated gate transistor 绝缘栅金属氧化物半导体晶体管
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
应用推荐