metal gate transistor 金属栅晶体管
Tri-gate Transistor 电晶体 ; 三栅极晶体管 ; 采用三栅极晶体管技术 ; 三闸晶体管
silicon gate transistor 硅栅晶体管
resonant gate transistor [电子] 谐振栅晶体管
floating gate transistor 浮栅金属氧化物半导体晶体管
self-aligning gate transistor [电子] 自控栅极晶体管 ; 自对准闸晶体管
Injection enhanced gate transistor 电子注入增强栅晶体管
mos insulated gate transistor 绝缘栅金属氧化物半导体晶体管
insulated gate bipolar transistor 绝缘栅双极型晶体管
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Intel claimed a breakthrough in transistor technology by announcing that it was ready to use its 3D Tri-Gate chip, first unveiled in 2002, in high-volume manufacturing.
英特尔公司(Intel)称其在晶体管技术中取得了重大突破——应用三栅级晶体管技术的3D芯片将进入量产阶段。 该技术首次亮相于2002年。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
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