Gate-resistance 门极电阻
Gate resistance Rg 栅电阻Rg
distributed gate resistance noise 分布闸极电阻杂讯
gate-controlled negative differential resistance device 栅控负微分电阻器件
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.
通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
Provided that the value of gate resistance is acquired from measurement, the precision of the solution can be improved further.
利用测量得到的栅电阻，计算结果的精度可以进一步提高。
Based on this formula, the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.
基于此解析式，讨论了分布栅电阻和内部沟道电阻对噪声性能的影响。
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