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栅隧穿电流分量研究_电子行业学术文章_质量学术文章_电子质量E周刊 关键词： MOS器件；栅氧化层；隧穿 [gap=480]Key words: MOS devices;gate oxide;tunneling
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为此，晶圆厂已尝试运用包括减少导线间闸极氧化层(Gate Oxide)，或在16及14纳米制程增加动态电力密度，甚至采用更大型、更昂贵的次世代制程因应越趋复杂的设计，以解决秏电问题。
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gate oxide defect 栅氧化层缺陷
gate oxide integrity 栅极氧化层的完整性 ; 门氧化层完整性
Gate oxide Furnace 门极氧化炉
thin gate oxide [电子] 薄栅氧化层
gate oxide leakage 栅氧化层泄漏
gate-oxide 栅氧
dual gate oxide 双栅氧
Ultra-Thin Gate Oxide 超薄闸极氧化层
thick gate oxide 厚栅氧
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栅氧化层 - 引用次数：22 参考来源 - SOI MOSFET静态特性研究栅氧化膜 - 引用次数：3
A high electrical field apparently developed across the gate-oxide of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) during plasma processing. This high electric field leads to gate oxide breakdown or wear-out (lifetime shortening).
在等离子体工艺中,MOSFET的栅氧化膜上存在较高的电场应力,进而使得栅氧击穿或失效(寿命缩短)。
参考来源 - 等离子工艺引起的栅氧化膜充电损伤机理研究闸極氧化层栅极氧化层氧化栅极 -
门氧化物
·2,447,543篇论文数据，部分数据来源于NoteExpress
Gate oxide
- abstract: The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by oxidizing the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide.
以上来源于: WordNet
双语例句
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Gate polysilicon is deposited over the gate oxide.
以及沉积于所述栅极氧化物之上的栅极多晶硅。
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TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
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For gate oxide breakdown OTP memory, we present a viable NOR array structure and current sense amplifiers.
针对栅氧化层击穿otp存储单元提出了可行的阵列结构和电流敏感放大器。
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