栅级漏电流（Gate leakage current）随着栅级氧化层厚度的 减小变得越来越突出（130nm工艺下大约为12一16埃），而气 每减小2埃栅级漏电流将会有一个数量级的提高，随...
基于20个网页-相关网页
... gate land || 浇口面 gate leakage current || 栅极漏电流 gate level simulator || 门级模拟程序 ...
基于10个网页-相关网页
drain gate leakage current 漏栅漏电流
gate leakage current density 栅漏电流密度
Gate-emitter leakage current 发射极间的漏电流
gate-oxide leakage current 栅氧化层漏电流
gate contact leakage current 栅结漏电流
gate-contact leakage current 栅结漏电流
gate footstep leakage current 栅漏电流
gate induced drain leakage current 栅极感应漏极漏电流
The increase of gate leakage current has become one of the major constraints of device size reduction.
栅漏电流增加已成为器件尺寸缩减的主要限制因素之一。
参考来源 - MOSFET隧穿漏电流噪声特性及测试方法研究Secondly, considering the design parameters including the subthreshold leakage current, gate leakage current, active power and speed, two new sub 65 nm domino techniques are proposed.
其次,在权衡考虑动态功耗、亚阈值漏电流、栅极漏电流和速度等多个重要指标后,设计了两种新型的多米诺或门结构。
参考来源 - 亚65纳米CMOS工艺低功耗高性能多米诺电路的设计研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
应用推荐