... gate land || 浇口面 gate leakage current || 栅极漏电流 gate level simulator || 门级模拟程序 ...
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drain gate leakage current 漏栅漏电流
gate leakage current density 栅漏电流密度
gate-oxide leakage current 栅氧化层漏电流
gate-contact leakage current 栅结漏电流
gate induced drain leakage current 栅极感应漏极漏电流
The increase of gate leakage current has become one of the major constraints of device size reduction.
栅漏电流增加已成为器件尺寸缩减的主要限制因素之一。
参考来源 - MOSFET隧穿漏电流噪声特性及测试方法研究Secondly, considering the design parameters including the subthreshold leakage current, gate leakage current, active power and speed, two new sub 65 nm domino techniques are proposed.
其次,在权衡考虑动态功耗、亚阈值漏电流、栅极漏电流和速度等多个重要指标后,设计了两种新型的多米诺或门结构。
参考来源 - 亚65纳米CMOS工艺低功耗高性能多米诺电路的设计研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
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