...次工程的技术，在维持各式深次微米制程的驱动电流（drive current）之际，可减少N型电晶体(NMOS)的 闸极漏电流 （ gate leakage ）高达70%，P型电晶体(PMOS)的部份则高达90%。
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gate leakage current 栅极漏电流
gate-leakage 栅漏
gate leakage test 导叶漏水试验
gate leakage model 栅泄漏模型
wicket gate leakage 导叶漏水
drain gate leakage current 漏栅漏电流
gate leakage current density 栅漏电流密度
gate oxide leakage 栅氧化层泄漏
gate induced drain leakage 闸极导致泄极产生漏电流
The formula was deduced on gate leakage and leakage torque of pump - turbine of pumped storage station.
本文利用动量矩定理推导出抽水蓄能电站水泵水轮机导叶漏水量与漏水转矩的计算公式。
One affect is to improve the transistor performance while retaining or even improving the level of gate leakage.
一种影响是在保持、甚至改善栅极漏电水平的同时改善晶体管性能。
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
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