The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).

利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。

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The vertical transistor, however, does not rely on lithography and etching to define its gate length.

ECONOMIST: Transistors: A tall story | The

Only when all the masking and etching is complete is the sacrificial gate layer dissolved away, allowing the gates (and the insulation layers between the gate and channel of each transistor) to be filled in.

ECONOMIST: Transistors: A tall story | The