The results show that the limiting factor in thin gate oxides breakdown depends on the balance between the amount of injected hot electrons and holes.
研究结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
A sluice gate for regulating the amount of water in a millrace or a canal or for emptying a lock.
位于河流上游的用以控制上游的水流的一个水闸。
应用推荐