• 栅漏电容 - 引用次数：2

  The relationship between between gate-drain capacitance (Cgd) and drain-source voltage (Vds) is concluded. The influence of thickness and length of gate oxide ,drift concentration and channel concentration on gate-drain capacitance (Cgd) is analysed.

  在ISE平台上模拟并研究了VDMOS的电容特性,总结了栅漏电容Cgd和漏源电压Vds的关系;分析了栅氧层厚度和长度、漂移区浓度、沟道区浓度等参数对Cgd的影响。

  参考来源 - 射频VDMOS器件结构研究

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