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Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.
由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。
The calculated results also indicate that higher saturation current, transconductance, and cutoff frequency can be achieved by lowering the parasitic resistances.
降低寄生源漏电阻可以获得更高的饱和电流、跨导和截至频率。
In terms of transient characteristics, the gate-lag phenomenon and the frequency dispersion of transconductance (gm) and output conductance will be found.
在瞬态特性上，引起栅延迟以及跨导和输出电导的频散。
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