The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
Transmissibility formula is brought forward on the basis of flexible base, and the effect of base impedance on vibration isolation efficiency is discussed.
针对这一问题推导了柔性基础上的传递率计算公式，讨论了基础阻抗对隔振效果的影响。
It also puts forward the applicable range of measuring impedance and sub circuit impedance action features.
规定了测量阻抗动作特性和支接阻抗动作特性的适用范围。
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