During an ESD event, both D1 and D2 can conduct, but the voltage at VIN exceeds the power-supply-rail voltage by only two forward-biased diode voltage drops.
在ESD事件中，D1和D2可以进行传导，但通过两个前置偏移二极管压降，VIN端的电压超出供电电源电压。
The development of the test instrument for forward-biased second breakdown for characteristics of power transistors (GIR) is described and main parameters are given.
本文对功率晶体管(GTR)正偏二次击穿测试仪的研制进行了说明，并给出了主要技术参数。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
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