beam-forming electrode 聚束极 ; 集射电极
beam forming electrode 电子束形成电极
consumable electrode-forming 自耗电极成型
electrode beam-forming 射柱形成电极
forming of electrode 电极成型
electrode-forming mechanism 电极成型机械
consumable electrode forming 自耗电极成型
A plasma rotating electrode process (PREP) equipment, process parameters and powder forming mechanism were introduced.
介绍了等离子旋转电极工艺(PREP)制粉设备、主要工艺参数和粉末形成机理。
In this paper, concept of staggered generating ratio has been put forward, the forming process has been analysed, the calculate equation of the electrode dimension has been given.
文中提出了交错展成比的概念，分析了成形过程，给出了电极尺寸计算公式。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
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