floating-gate memory 浮栅存储器
nonvolatile floating gate memory 非挥发浮栅存储器
nonvolatile floating-gate memory 非易失浮栅存储器
nano-crystal floating gate memory 纳米浮栅存储器
floating gate avalanche injection memory 浮栅雪崩注入存储器
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方 法。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
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