The third chapter described the floating body effect problems.
第三章介绍了SOI主要材料制备方法及耗尽型SOI MOSFET器件浮体效应的抑制方法。
参考来源 - 抗辐照高性能静态随机存取存储器技术研究
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Floating body effect
abstract:The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate.