The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments.

通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理。

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There is also the possibility of storing multiple bits per cell, such as in flash memory chips.

同时也有可能在一个单元存储多个字节，比如闪存芯片。

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To reduce bit cost in the same generation of process, multi-bit in one cell technology has been developed for flash memory.

为了在现有条件下进一步降低闪速存储器的单位成本，已开发了各种单管多位技术。

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Intel announced a new SATA interface enterprise solid state drive (SSD) that uses 25 nm multi-level cell flash memory (this is 2 bit per cell technology referred to as MLC).

FORBES: New Technology and Investment Opportunities at the 2011 Intel Developers Forum

Now it is up to customer demand to deliver those top-line numbers--in particular, demand for flash memory chips in advanced cell phones as well as strong sales of AMD's 64-bit Opteron processor for computer servers, due to launch on April 22.

FORBES: AMD Learns To Share

This new generation of MLC flash memory SSDs include improvements in the flash cells themselves combined with NAND flash memory management in the controller to achieve much better flash cell endurance.

FORBES: New Solid State Drives for Enterprise Applications