For example, program voltage levels used in EPROM and flash memory circuits are higher than the voltages normally used in memory circuits.

举例来说，在EPROM和快闪存储器电路中使用的编程电压电平高于存储器电路中通常使用的电压。

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This paper introduces the FLASH MEMORY circuits technique and structure characteristic, also compared the circuits with that of EPROM and EEPROM.

本文介绍了闪速存储器的结构特点和工艺技术，并与EPROM和EEP - ROM电路进行了比较。

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