This paper analyzes and discusses some structure's features on the surface of silicon by atomic force microscope (AFM) electrical field induced oxidation.
文中对原子力显微镜(afm)电场诱导硅氧化结构的部分形状特征进行了分析和讨论。
The theory of field-induced oxidation and the impact of bias voltage and pulse time on the nanofabrication were studied by AFM.
用原子力显微镜（AFM）研究了电场诱导氧化理论以及偏置电压和脉冲时间对加工结构尺寸的影响。
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