早期非晶硅局限于逻辑开关与低分辨率面板的应用，低温多晶硅薄膜晶体管凭借着较高的载流子迁移率(Field Effect Mobility)，可以适当集成驱动电路于面板中，连线信号的减少降低外贴驱动IC、电路板面积与周边零组件的使用，减小了面板整体重量与体积，而...
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This is why the single crystal pentacene based OTFT has higher field effect mobility than the polycrystalline device.
这也就解释了单晶otft器件具有比多晶器件更高的场效应迁移率的原因。
A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.
串联电阻不仅会使迁移率降低，还会使峰值场效应迁移率所对应的栅压减小。
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