A related layer is the field oxide, which provides isolation from other device structures.
一个相关层是场氧化层，使其与其它器件结构分离。
A positive feedback hot-carrier degradation caused by positive fixed oxide charges increases the electrical field at the drain edge, which degrades the device characteristics seriously.
由于栅氧化层中的固定正电荷引起正反馈的热载流子退化增强了漏端电场，使得器件特性严重退化。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
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