vertical channel fet 垂直沟道场效应晶体管
buried channel fet 埋沟场应晶体管
short channel fet 短沟道场效应晶体管
n channel junction fet 沟道结型场效应晶体管
p channel fet 沟道场效应晶体管
n channel fet 沟道场效应晶体管
channel fet 沟道场效应晶体管
p channel fet p 沟道场效应晶体管
n channel junction fet n 沟道结型场效应晶体管
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
本文讨论了砷化镓双栅场效应管在电视接收机UHF频道选择器中作高频调谐放大和变频应用时的一些考虑，并给出有关的实验结果。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
应用推荐