Characteristic of ferroelectric storage element has be en introduced in this paper. A few main preparation methods of information function thin film have been recommended. We present its use field.
本文介绍了铁电存储器的特性，提出了信息功能薄膜的几种主要的制备方法，指出了它的应用领域。
The improvements stem from using ferroelectric layers that no longer requires the use of a storage capacitor found in conventional DRAM cells.
这一改进使用了铁电层，从而不再需要使用传统DRAM单元中的存储电容。
Since multiferroic magnetoelectric (ME) material has ferroelectric, ferromagnetic and magnetoelectric properties, it is possible to use this material for the design of storage device.
多铁性磁电材料同时具有铁电性、铁磁性和磁电效应等多种性能，它为新功能存储器件的设计提供了可能性。
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