An EUV Lithography mask, a fabrication method, and use method thereof is provided.

本发明提供了一种EUV光刻掩模、其制造方法与其使用方法。

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Reflective optical elements based on multilayer coatings are have entered the practical stage that take EUV lithography and EUV astrophysics as the core.

目前，基于极紫外多层膜的反射式光学元件，已经全面进入了以极紫外光刻与极紫外天文观测为核心的实用化阶段。

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Under the Co-Investment Program, which was announced on July 9, 2012, ASML will accelerate the development of key lithography technologies needed to extend Moore's Law, notably Extreme Ultraviolet (EUV) lithography.

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The specific technology areas that Intel is investing in are 450mm wafers and extreme ultraviolet (EUV) lithography.

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