When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.

在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。

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Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.

因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。

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