The concept is reduplicated etch pits of crystal defect.
提出晶面缺陷的复制侵蚀势概念。
Growth striations and etch pits were investigated by etching samples with AB and KOH etchants, respectively.
用AB液和KOH液腐蚀所生长的晶体，分别观察磁场中生长晶体的腐蚀条纹和腐蚀坑变化。
The shape, distribution and density of etch pits on the (101) face was observed by metalloscope after chemical etching.
单晶，通过化学腐蚀和金相显微镜研究了（101）晶面蚀坑的形貌、分布特征及其密度的大小。
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